Accession Number:

ADA495071

Title:

Advanced Plasma Etching of Complex Combinations of III-V Heterostructures

Descriptive Note:

Final rept. 1 Mar 2007-30 Jun 2008

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS

Report Date:

2008-09-28

Pagination or Media Count:

4.0

Abstract:

The optoelectronic structures and devices, whose study will be enabled by the acquired research instrumentation, including ultra-broadband modulators, photonic crystal lasers, and very fast optical logic circuits, are of intense interest for future Air Force needs. The objective of the research instrumentation acquisition is to enhance the institutions ability to study III-V semiconductor materials and devices. An inductively-coupled plasma reactive-ion etcher will be acquired for sophisticated, on-site fabrication of photonic and optoelectronic devices with novel III-V heterostructures.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE