Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax > 650GHz for 340GHz Transmitter
Final rept. 18 Jul 2007-18 Jul 2008
ILLINOIS UNIV CHAMPAIGN
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The proposed program goals are the development of transistor technology for the sub-millimeter wave i.e 340GHz source to be used in a wide range of military and consumer applications using transistors operating toward THz bandwidths. The transistors will be designed, developed and fabricated using a novel material structure employing a type H double heterojonction bipolar transistor type II DHBT. This structure has a world-record high-speed operation ft 500 GHz with higher breakdown voltage and lower junction temperatures than any other competing technology, including lattice matched type I InPInGaAs I SHBTs, type I DHBTs, and pseodomorphic high-electron mobility transistors pHEMTs. We propose to accomplish these using Antimonide-based DHBTs for all active components of the power amplifier. This project will be broken up into three stages consisting of a transistor development and fabrication stage, a model development stage, and a power amplifier design stage. In the transistor development and fabrication stage the speed of Sb-DHBTs will be increased to reach the goal of 650400 GHz fMAXfT. Device models Agilent ADS and UTUCs own SDD2 will be refined to accurately represent the devices high frequency characteristics and enable the design of the power amplifiers components. Finally a power amplifier operating at 340GHz will be designed and simulated to assess power gain, maximum Output power, and power added efficiency.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Electricity and Magnetism