Accession Number:

ADA488386

Title:

Terahertz Gain on Inter-Valence-Band Transitions in Multilayer Delta-Doped p-GaAs Structures

Descriptive Note:

Conference paper

Corporate Author:

AIR FORCE RESEARCH LAB HANSCOM AFB MA OPTOELECTRONIC TECHNOLOGY BRANCH

Report Date:

2006-05-17

Pagination or Media Count:

11.0

Abstract:

A concept for a terahertz laser in vapor-phase-grown homoepitaxial GaAs with spatially periodic doping profile was theoretically explored. Monte Carlo simulation of hole transport in multilayer delta-doped p-GaAsGaAs structures in crossed electric and magnetic fields was performed to investigate possibilities of the terahertz amplification on intervalence-band light-to-heavy hole transitions. The results are compared to those calculated for uniformly doped bulk p-GaAs and recently proposed p-GeGe structures. The improvement in the gain for delta-doped p-GaAs structures is about approximately 2 - 3 times over bulk p-GaAs. Terahertz laser generation in the considered GaAs device concept appears feasible, as is growth of structures with active thicknesses sufficient to support quasioptical cavity solutions at 100 microns vacuum wavelengths. Potential applications for the considered laser device include sensing of chembio agents and explosives, biomedical imaging, non-destructive testing, and communications.

Subject Categories:

  • Lasers and Masers
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE