A Monohydride High-Index Silicon Surface: Si(114):H-(2x1)
NAVAL RESEARCH LAB WASHINGTON DC
Pagination or Media Count:
We describe the adsorption of H on Si114-2x1 as characterized by scanning tunneling microscopy and first-principles calculations. Like Si001-and despite the relative complexity of the 114 structure-a well-ordered, low-defect-density monohydride surface forms at approx. 400 deg. C. Surprisingly, the clean surface reconstruction is essentially maintained on the 2 x 1 monohydride surface, composed of dimers, rebonded double-layer steps, and nonrebonded double-layer steps, with each surface atom terminated by a single H. This H-passivated surface can also be easily and uniformly patterned by selectively desorbing the H with low-voltage electrons.
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices
- Solid State Physics