Accession Number:

ADA482937

Title:

A Monohydride High-Index Silicon Surface: Si(114):H-(2x1)

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1999-03-08

Pagination or Media Count:

4.0

Abstract:

We describe the adsorption of H on Si114-2x1 as characterized by scanning tunneling microscopy and first-principles calculations. Like Si001-and despite the relative complexity of the 114 structure-a well-ordered, low-defect-density monohydride surface forms at approx. 400 deg. C. Surprisingly, the clean surface reconstruction is essentially maintained on the 2 x 1 monohydride surface, composed of dimers, rebonded double-layer steps, and nonrebonded double-layer steps, with each surface atom terminated by a single H. This H-passivated surface can also be easily and uniformly patterned by selectively desorbing the H with low-voltage electrons.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE