Accession Number:

ADA482925

Title:

A Stable High-Index Surface of Silicon: Si(5 5 12)

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1995-09-15

Pagination or Media Count:

6.0

Abstract:

A stable high-index surface of silicon, Si5 5 12, is described. This surface forms a 2 x 1 reconstruction with one of the largest unit cells ever observed, 7.7 angstroms by 53.5 angstroms. Scanning tunneling microscopy STM reveals that the 68 surface atoms per 2 x 1 unit cell are reconstructed only on a local scale. A complete structural model for the surface is proposed, incorporating a variety of features known to exist on other stable silicon surfaces. Simulated STM images based on this model have been computed by first-principles electronic-structure methods and show excellent agreement with experiment.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE