Accession Number:

ADA482883

Title:

Ga-Induced Restructuring of Si(112) and Si(337)

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s):

Report Date:

1996-04-01

Pagination or Media Count:

4.0

Abstract:

The adsorption of gallium on Si112 and Si337 has been studied with scanning tunneling microscopy. When clean, these two high-index surfaces are unstable and facet to other orientations 112 to 111- and 337-like nanofacets, and 337 to the stable 5 5 12 plane. When Ga is adsorbed onto each of these surfaces and annealed, the top surface layers undergo substantial rearrangements, exposing Ga-reconstructed 112 planes in both cases.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE