Ga-Induced Restructuring of Si(112) and Si(337)
NAVAL RESEARCH LAB WASHINGTON DC
Pagination or Media Count:
The adsorption of gallium on Si112 and Si337 has been studied with scanning tunneling microscopy. When clean, these two high-index surfaces are unstable and facet to other orientations 112 to 111- and 337-like nanofacets, and 337 to the stable 5 5 12 plane. When Ga is adsorbed onto each of these surfaces and annealed, the top surface layers undergo substantial rearrangements, exposing Ga-reconstructed 112 planes in both cases.
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices