Accession Number:

ADA482881

Title:

Structure of Ge(113): Origin and Stability of Surface Self-Interstitials

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1998-08-01

Pagination or Media Count:

5.0

Abstract:

Using atomic-resolution scanning tunneling microscopy and first-principles calculations we show that Ge and Si113 are structurally similar, contrary to previous reports. Both surfaces have 3 x 2 and 3 x 1 reconstructions stabilized by surface self-interstitials, with the 3 x 2 lower in energy on Si but degenerate with the 3 x 1 on Ge. Statistical analysis of fluctuations observed between the two structures on Ge, combined with calculations for bulk interstitials, indicate that the surface not the bulk is the likely source and sink of the surface self-interstitials for both materials.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE