Accession Number:

ADA482755

Title:

Surface Morphology of Homoepitaxial GaSb Films Grown on Flat and Vicinal Substrates

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2001-08-01

Pagination or Media Count:

11.0

Abstract:

We have compared the surface morphology of GaSb homoepitaxial films grown on both flat and 1 deg vicinal miscut towards 1 1 1A 0 0 1 substrates using atomic force microscopy and scanning tunneling microscopy. Mound formation is observed for GaSb homoepitaxy on the flat substrates over a range of growth temperatures when either Sb2 or Sb4 is used to supply the group V flux. At sufficiently high growth temperatures, which are different depending on whether Sb2 or Sb4 is used, the mounds transform into fairly well-defined pyramids comprised of distinctly stacked layers that are clearly separated by monolayer-height steps.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE