Surface Morphology of Homoepitaxial GaSb Films Grown on Flat and Vicinal Substrates
NAVAL RESEARCH LAB WASHINGTON DC
Pagination or Media Count:
We have compared the surface morphology of GaSb homoepitaxial films grown on both flat and 1 deg vicinal miscut towards 1 1 1A 0 0 1 substrates using atomic force microscopy and scanning tunneling microscopy. Mound formation is observed for GaSb homoepitaxy on the flat substrates over a range of growth temperatures when either Sb2 or Sb4 is used to supply the group V flux. At sufficiently high growth temperatures, which are different depending on whether Sb2 or Sb4 is used, the mounds transform into fairly well-defined pyramids comprised of distinctly stacked layers that are clearly separated by monolayer-height steps.
- Inorganic Chemistry