Accession Number:

ADA482500

Title:

The Structure of Si(112):Ga-(N x 1) Reconstructions

Descriptive Note:

Journal article

Corporate Author:

VIRGINIA COMMONWEALTH UNIV RICHMOND DEPT OF PHYSICS

Report Date:

1999-01-01

Pagination or Media Count:

7.0

Abstract:

We have studied the structure of Si112Ga-N1 reconstructions using atomic-resolution scanning tunneling microscopy and first-principles calculations. The nanofaceted clean Si112 surface becomes planar following the adsorption of Ga, which forms long chains on the surface interrupted by isolated quasi-periodic defects. The defects create a mixture of N1 structures N4-7 with 5 1 and 6 1 unit cells most common. We demonstrate that this structure consists of a chain of Ga atoms adsorbed at the 111-like step edge within the 112 unit cell, and that the defects are Ga vacancies where the exposed step edge Si atoms form a dimer bond. Calculations performed as a function of vacancy period confirm that the surface energy is minimized at N5-6, when compressive strain associated with the Si-Ga bonds is effectively minimized.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE