Transport Properties of Be- and Si-Doped AlSb
NAVAL RESEARCH LAB WASHINGTON DC
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Thick epitaxial layers of AlSbSi and AlSbBe were grown by molecular beam epitaxy and characterized by variable-temperature Hallvan der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33 - 4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38 - 4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 10exp 15 to 10exp 19 cu cm. Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSbBe layers.
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