Accession Number:

ADA482496

Title:

Photoluminescence of InAs(1-x)Sb(x)/AlSb Single Quantum Wells: Transition from Type-II to Type-I Band Alignment

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2000-06-01

Pagination or Media Count:

4.0

Abstract:

Infrared photoluminescence has been used to study the band-gap energy of InAs1-xSbx digital superlattices and the band alignment of InAs1-xSbxAlSb quantum wells at 5 K. It is found that the InAs1-xSbx digital alloys have a smaller effective band gap than InAs1-xSbx random alloys. In addition, the valence band offset between type-II InAsAlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1-xSbx is increased, and the alignment between InAs1-xSbxAlSb becomes type I when x 0.15.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Optics
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE