Photoluminescence of InAs(1-x)Sb(x)/AlSb Single Quantum Wells: Transition from Type-II to Type-I Band Alignment
NAVAL RESEARCH LAB WASHINGTON DC
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Infrared photoluminescence has been used to study the band-gap energy of InAs1-xSbx digital superlattices and the band alignment of InAs1-xSbxAlSb quantum wells at 5 K. It is found that the InAs1-xSbx digital alloys have a smaller effective band gap than InAs1-xSbx random alloys. In addition, the valence band offset between type-II InAsAlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1-xSbx is increased, and the alignment between InAs1-xSbxAlSb becomes type I when x 0.15.
- Electrical and Electronic Equipment
- Quantum Theory and Relativity
- Solid State Physics