Resonant Interband Tunnel Diodes with AlGaSb Barriers
NAVAL RESEARCH LAB WASHINGTON DC
Pagination or Media Count:
The peak current density of InAsAlSbGaSbAlSbInAs resonant interband tunneling diodes RITDs has been enhanced by replacing the AlSb barriers with Al1-xGaxSb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-ML-thick ternary alloy barriers with x0.35 are found to have peak current densities three times larger than those with AlSb barriers. The peak-to-valley current ratio decreases by only one third from 18 for the AlSb diodes to 12 for diodes with the ternary alloy barriers.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Solid State Physics