Accession Number:

ADA482494

Title:

Resonant Interband Tunnel Diodes with AlGaSb Barriers

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2001-05-15

Pagination or Media Count:

4.0

Abstract:

The peak current density of InAsAlSbGaSbAlSbInAs resonant interband tunneling diodes RITDs has been enhanced by replacing the AlSb barriers with Al1-xGaxSb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-ML-thick ternary alloy barriers with x0.35 are found to have peak current densities three times larger than those with AlSb barriers. The peak-to-valley current ratio decreases by only one third from 18 for the AlSb diodes to 12 for diodes with the ternary alloy barriers.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE