Accession Number:

ADA482493

Title:

Proton Irradiation of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2001-04-23

Pagination or Media Count:

4.0

Abstract:

Room temperature current voltage measurements have been made on InAsAlSbGaSb resonant interband tunnel diodes RITDs irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Isub p and the peak-to-valley current ratio PV. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1 x 10exp 15 and 2 x 10exp 14 Hsq cm, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence with a large increase occurring in the voltage range between the negative resistance peak and the valley. Isub p increased less than 50, while a large increase in the valley current decreased the PV ratios to about 2.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Crystallography
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE