Accession Number:

ADA482492

Title:

Observation of Deep Traps Responsible for Current Collapse in GaN Metal-Semiconductor Field-Effect Transistors

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1999-12-20

Pagination or Media Count:

4.0

Abstract:

Deep traps responsible for current collapse phenomena in GaN metal semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at 2.85 eV. Both also appear to be the same traps recently associated with persistent photoconductivity effects in GaN.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE