Photoionisation Spectroscopy of Traps in AlGaN/GaN High Electron Mobility Transistors Grown by Molecular Beam Epitaxy
NAVAL RESEARCH LAB WASHINGTON DC
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Photoionization spectroscopy has been carried out in bias-stressed AlGaNGaN high electron mobility transistors HEMTs grown by Molecular Beam Epitaxy MBE to probe the nature of the deep trapping centers responsible for stress-induced current collapse in these devices. The results indicate that a GaN buffer layer trap previously associated with current collapse in devices grown by Metal Organic Chemical Vapor Deposition MOCVD is responsible for induced collapse in MBE-grown structures.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Atomic and Molecular Physics and Spectroscopy
- Nuclear Physics and Elementary Particle Physics