Accession Number:

ADA482491

Title:

Photoionisation Spectroscopy of Traps in AlGaN/GaN High Electron Mobility Transistors Grown by Molecular Beam Epitaxy

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2003-09-04

Pagination or Media Count:

3.0

Abstract:

Photoionization spectroscopy has been carried out in bias-stressed AlGaNGaN high electron mobility transistors HEMTs grown by Molecular Beam Epitaxy MBE to probe the nature of the deep trapping centers responsible for stress-induced current collapse in these devices. The results indicate that a GaN buffer layer trap previously associated with current collapse in devices grown by Metal Organic Chemical Vapor Deposition MOCVD is responsible for induced collapse in MBE-grown structures.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE