Accession Number:

ADA482490

Title:

Monolithic Integration of Resonant Interband Tunneling Diodes and High Electron Mobility Transistors in the InAs/GaSb/AlSb Material System

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2000-06-01

Pagination or Media Count:

4.0

Abstract:

InAsAlSb high electron mobility transistors HEMTs and resonant interband tunneling diodes RITD with AlSb barriers and GaSb wells were grown in a single heterostructure by molecular beam epitaxy. The resulting HEMTs exhibit excellent dc and microwave performance at low drain voltages with an intrinsic unity-current-gain cutoff frequency of 220 GHz. The RITD performance is comparable to RITDs grown directly on InAs substrates, with peak current densities above 10exp 4 Asq cm and peak-to-valley ratios near 11 for 15 Angstrom AlSb barriers. The results represent an important step toward the fabrication of high-speed, low-power logic circuits in this material system.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE