Optical Characterization of Lateral Epitaxial Overgrown GaN Layers
NAVAL RESEARCH LAB WASHINGTON DC
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The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatially resolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measurements indicate that a donor and an acceptor, different from those detected in the underlying GaNAlNSiC substrate, have been incorporated in the epitaxial layer. Detailed photoluminescence studies of the near band-edge emission strongly suggest that Si is the additional donor detected in the homoepitaxial GaN layer. Its occurrence, along with that of an acceptor-related defect which is primarily found in the laterally overgrown region, is discussed.
- Inorganic Chemistry
- Electrical and Electronic Equipment