Accession Number:

ADA482464

Title:

Cross-Sectional Scanning Tunneling Microscopy of Mn-Doped GaAs: Theory and Experiment

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2003-12-23

Pagination or Media Count:

7.0

Abstract:

We report first-principles calculations of the energetics and simulated scanning tunneling microscopy STM images for Mn dopants near the GaAs 110 surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on detailed comparisons of the simulated and experimental images, we identify three types of Mn configurations imaged at the surface 1 single Mn substitutionals, 2 pairs of Mn substitutionals, and 3 complexes of Mn substitutionals and interstitials.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Test Facilities, Equipment and Methods

Distribution Statement:

APPROVED FOR PUBLIC RELEASE