Accession Number:

ADA482374

Title:

Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging

Descriptive Note:

Final rept. 1 Oct 2003-30 Sep 2007

Corporate Author:

PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

2007-11-19

Pagination or Media Count:

14.0

Abstract:

Lattice-matched InGaAsInp quantum well infrared detector QWIP exhibits high photoconductive gain but un-adjustable detection wavelength because of its fixed barrier height. The use of InxGa1-xAsyP1-y InGaAsP as the barrier material is superior to that of InP with regard to the flexibility of operating wavelength. In this letter we investigate the application of InGaAsP material in the long wavelength infrared detection. We report a broadband quantum well InGaAsInGaAsP detector covering 8-14 m. The excellent agreement between the observed responsivity spectrum and the calculated one is achieved indicating the validness of our design model. In order to determine the usefulness of InGaAsP in long-wavelength detection, we also design a GaAsAlGaAs quantum well detector with similar spectrum and compare its performance with that of the InGaAsInGaAsP detector. The dark current noise measurement indicates that the gain in InGaAsP is 4.6 times larger than that of AlGaAs, showing that InGaAsP is a good candidate for long-wavelength high-speed infrared detection.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Cybernetics
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE