Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors
Final rept. 15 Jul 2004-14 Oct 2005
ARIZONA STATE UNIV TEMPE
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The work performed using support from this grant has focused on the following 1 the development of ZrB2 buffer layers and Si-Ge-Sn compliant templates grown directly upon Si 100, and 2 the demonstration of these systems in mismatched heteroepitaxy of tetrahedral semiconductors including III-V compounds and group IV materials with Si substrates.
- Inorganic Chemistry
- Electrical and Electronic Equipment