Accession Number:

ADA482349

Title:

Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors

Descriptive Note:

Final rept. 15 Jul 2004-14 Oct 2005

Corporate Author:

ARIZONA STATE UNIV TEMPE

Personal Author(s):

Report Date:

2007-05-08

Pagination or Media Count:

3.0

Abstract:

The work performed using support from this grant has focused on the following 1 the development of ZrB2 buffer layers and Si-Ge-Sn compliant templates grown directly upon Si 100, and 2 the demonstration of these systems in mismatched heteroepitaxy of tetrahedral semiconductors including III-V compounds and group IV materials with Si substrates.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE