Accession Number:

ADA482272

Title:

The Contribution of Antimonide Surface Reconstructions to Heterostructure Interface Roughness

Descriptive Note:

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1999-08-01

Pagination or Media Count:

4.0

Abstract:

Using RHEED and STM, we have studied surface reconstructions and formation of islands and interfaces for the 6.1 Angstrom family of compound semiconductors InAs, GaSb, AlSb. The structure and stoichiometry of MBE-grown antimonide surfaces lead to growth and roughening mechanisms that are distinctly different from other III-V materials. When a new material is grown on an antimonide surface, some blurring of the resulting heterointerface must occur in the form of monolayer islands or atomic-scale intermixing.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE