Accession Number:

ADA482191

Title:

Self-Assembled InSb and GaSb Quantum Dots on GaAs(001)

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1996-06-01

Pagination or Media Count:

5.0

Abstract:

Quantum dots of InSb and GaSb were grown on GaAs001 by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1-2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherently strained. Quantum dots of InSb and GaSb capped by GaAs exhibit strong luminescence near 1.1 eV.

Subject Categories:

  • Inorganic Chemistry
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE