Stranski-Krastanov Growth of InSb, GaSb, and AlSb on GaAs: Structure of the Wetting Layers
NAVAL RESEARCH LAB WASHINGTON DC
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Thin layers of InSb, GaSb and AISh were grown on GaAsO 0 1 by molecular beam epitaxy and characterized in situ with scanning tunneling microscopy. All three materials exhibit a Stranski-Krastanov growth mode. Distinct wetting layers and self-assembled quantum dots are present after deposition of one to four monolayers of ln,Ga,AlSb. The wetting layers consist of anisotropic ribbon-like structures oriented along the T 1 0 direction, with characteristic separations of 40-50 A. The initial GaAs surface reconstruction affects both the wetting layer structure and the quantum dot density.
- Inorganic Chemistry
- Physical Chemistry