Accession Number:

ADA482128

Title:

Stranski-Krastanov Growth of InSb, GaSb, and AlSb on GaAs: Structure of the Wetting Layers

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1997-01-01

Pagination or Media Count:

7.0

Abstract:

Thin layers of InSb, GaSb and AISh were grown on GaAsO 0 1 by molecular beam epitaxy and characterized in situ with scanning tunneling microscopy. All three materials exhibit a Stranski-Krastanov growth mode. Distinct wetting layers and self-assembled quantum dots are present after deposition of one to four monolayers of ln,Ga,AlSb. The wetting layers consist of anisotropic ribbon-like structures oriented along the T 1 0 direction, with characteristic separations of 40-50 A. The initial GaAs surface reconstruction affects both the wetting layer structure and the quantum dot density.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE