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Accession Number:
ADA473573
Title:
Development of Highly Ordered Heterostructured Semiconductor Nanowire Arrays for Sub-Wavelength Optical Devices
Descriptive Note:
Final rept. Jul 2004-Mar 2007
Corporate Author:
TORONTO UNIV (ONTARIO) DEPT OF METALLURGY AND MATERIALS SCIENCE
Report Date:
2007-06-01
Pagination or Media Count:
31.0
Abstract:
Methodology for efficient growth of semiconductor nanowires of several Il-VI ZnSe, ZnO, znS and III-VI GaAs, InSb nanowires was developed and optimized. Based on optical and transport characterization measurements, defect states responsible for quenching of band-edge luminescence were identified and post-growth treatments were devised to eliminate those defects and to achieve strong excitonic emission. Carrier trapping dynamics was elucidated by ultrafast time-resolved optical pump-probe measurements. Optimized ZnSe nanowires were shown to exhibit an exceptionally high photoconductive response of 22AW in a single nanowire transistor device. Manganese doped ZnO nanowires were fabricated and above room temperature ferromagnetism was achieved. Transport measurements showed these wires to be n-type with a degenerate carrier distribution. The experimental efforts were supplemented by modeling that included design of high Q-factor nanowire array photonic cavities using as well as a theory of excitons in nanowires.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE