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Transition Metal Doped ZnO for Spintronics
Final rept. 1 Aug 2003-1 May 2007
FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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In this project, the properties of transition metal TM -doped ZnO will be investigated. The project focuses on two activities. First, the properties of ZnO doped with transition metals Mn, Co, or Cr and deep level impurities Cu, As, Sn is explored. The primary interest will be on elucidating the origin of magnetism in the TM-doped material, including understanding the role of deep level co-dopants in mediating ferromagnetism. Experiments will focus on correlating magnetic properties Curie temperature, momentTM dopant with the TM and deep level dopant concentrations. Epitaxial film growth and ion implantation of single crystals will be used in these studies. Second, for the dilute magnetic semiconducting compounds, there appears to be a correlation of Curie temperature with semiconductor bandgap. In an effort to increase the Curie temperature to greater than 300 K, the properties of TM-doped Zn,MgO will also be investigated, as the addition of Mg to ZnO increases the bandgap. The epitaxial films will be grown by pulsed-laser deposition. Temperature-dependent Hall and resistivity measurements will be used to determine conduction mechanisms, carrier type, and doping. SQUID magnetometry will be used to characterize the magnetic properties of transition metal doped materials.
APPROVED FOR PUBLIC RELEASE