Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN
Final rept. 1 Jun 2003-31 May 2006
CINCINNATI UNIV OH
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Rare earth RE dopants such as Er, Eu, Tm in the wide bandgap semiconductor WBGS GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths. GaNRE devices are extremely versatile emitters which emit light at very specific wavelengths and with very narrow spectral linewidth due to inner shell transitions of the selected RE dopants. We have fabricated singly doped GaN RE devices emitting pure light at the three primary visible colors red, green and blue and at important IR wavelengths 1.0, 1.3 and 1.5 m. We have also shown that co-doping with multiple REs produces mixed colors adjustable throughout the color spectrum. These multi-color light emitters have the potential to revolutionize many Army applications, such as vehicle and personal displays, secure communications, short-range illuminators, etc. The GaNRE light emitters are very robust in terms of exposure to high and low temperatures, corrosives, radiation, shock, vibration, etc.
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices