Structural and Electrical-Optical Characterizations of Semiconductor-Atomic Superlattice
Final rept. 3 Jul 2002-31 Dec 2006
NORTH CAROLINA UNIV AT CHARLOTTE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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The following work was accomplished under this funding A Semiconductor-Atomic Superlattice SAS consisting of Si-SiOSi-Si as a period. By repeating, a superlattice, SL is formed. Oxygen is introduced by gas adsorption, resembling mono-oxide rather than SiO2 which cannot be epitaxial. This epi-system has a theoretical strain 6, which is not prohibitive. This SAS shows PL and EL 2.3eV. Reverse current in I-V is reduced more than 2 orders of magnitude, may be used as an epitaxial gate for possible 3D ICs. B By defining a wave impedance or wave conductance the ratio of Poyting vector to energy stored, similar to the definition of photons, for electron, G ge2h, commonly known as fundamental conductance, where g 1,2,3... More remarkably, in 3D, we found that g is a tensor consisting of integers as well as fractions. C We consider N electrons confined inside a dielectric sphere, by minimizing the total interaction energy due to electron-electron term, polarization terms as well as self polarization term, we found that the EN interaction energy per electron versus N consists of features identical to the periodic table of elements, while using Poisson equation instead of Schrodinger equation. More remarkably is the fact that Paulis exclusion principle was never imposed.
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