Accession Number:

ADA470737

Title:

Structural and Electrical-Optical Characterizations of Semiconductor-Atomic Superlattice

Descriptive Note:

Final rept. 3 Jul 2002-31 Dec 2006

Corporate Author:

NORTH CAROLINA UNIV AT CHARLOTTE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

2007-05-01

Pagination or Media Count:

18.0

Abstract:

The following work was accomplished under this funding A Semiconductor-Atomic Superlattice SAS consisting of Si-SiOSi-Si as a period. By repeating, a superlattice, SL is formed. Oxygen is introduced by gas adsorption, resembling mono-oxide rather than SiO2 which cannot be epitaxial. This epi-system has a theoretical strain 6, which is not prohibitive. This SAS shows PL and EL 2.3eV. Reverse current in I-V is reduced more than 2 orders of magnitude, may be used as an epitaxial gate for possible 3D ICs. B By defining a wave impedance or wave conductance the ratio of Poyting vector to energy stored, similar to the definition of photons, for electron, G ge2h, commonly known as fundamental conductance, where g 1,2,3... More remarkably, in 3D, we found that g is a tensor consisting of integers as well as fractions. C We consider N electrons confined inside a dielectric sphere, by minimizing the total interaction energy due to electron-electron term, polarization terms as well as self polarization term, we found that the EN interaction energy per electron versus N consists of features identical to the periodic table of elements, while using Poisson equation instead of Schrodinger equation. More remarkably is the fact that Paulis exclusion principle was never imposed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE