Accession Number:

ADA470628

Title:

A Comparison of SiC Power Switches for High-Rel Defense Applications (preprint)

Descriptive Note:

Conference paper

Corporate Author:

MISSISSIPPI STATE UNIV MISSISSIPPI STATE CENTER FOR ADVANCED SEMICONDUCTOR PROTOTYPING

Report Date:

2007-07-01

Pagination or Media Count:

6.0

Abstract:

SiC VJFETs are an ideal device for a number of power electronics applications, including, but not limited to, high temperature motor drives, switch modules, and DC-DC or DC-AC invertersconverters. These applications are relevant to a number of military applications, such as shipboard power systems, more electric vehicles including hybrid vehicles, and power conditioning systems in hostile andor high temperature environments. The SiC VJFETs combine the switching speed of Si MOSFETs with the voltage and current handling properties of IGBTs and the thermal properties of SiC material. Since the VJFET is a unipolar device, it can easily be paralleled over the entire operating temperature range of the device. The SiC VJFET has a lower specific on resistance than the best Si IBGT and lacks the gate oxide problems of the SiC MOSFET. Because of the thermal properties of SiC and the lack of a gate oxide, they are capable of higher temperature operation than either device. The vertical channel structures provide for excellent packing density on the wafer and low per-unit production costs.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE