Accession Number:

ADA470256

Title:

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Descriptive Note:

Final rept. 1 Apr 2003-30 Sep 2006

Corporate Author:

BOSTON UNIV BROOKLINE MA DEPT OF MANUFACTURING ENGINEERING

Personal Author(s):

Report Date:

2007-06-01

Pagination or Media Count:

164.0

Abstract:

Plasma enhanced chemical vapor deposited PECVD silicon oxide SiOx is the most commonly used interlayer dielectric ILD in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE