Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices
Final rept. 1 Apr 2003-30 Sep 2006
BOSTON UNIV BROOKLINE MA DEPT OF MANUFACTURING ENGINEERING
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Plasma enhanced chemical vapor deposited PECVD silicon oxide SiOx is the most commonly used interlayer dielectric ILD in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms.
- Electrical and Electronic Equipment