Accession Number:

ADA470047

Title:

New Lattice-Mismatched Materials and Services

Descriptive Note:

Final rept. 2003-2005

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

2007-01-23

Pagination or Media Count:

19.0

Abstract:

In this program, we have been able to advance materials and device work in the area of lattice-mismatched semiconductor materials. In the silicon-germanium materials system, we have explored the use of strained layers together hydrogen implanted into the layers for an exfoliation process. This layer transfer technique was used to demonstrate germanium on insulator GOI substrate formation using virtual GeSi wafers. In III-V materials systems, we have investigated the formation of cracks during GaAs growth on virtual GeAsSi, GaAsGeSiGeSi, GaAs and GaAsGe, and show that the integrated intensity of the InGaAs QW on GaAsGeSiGeSi and GaAs are nearly equivalent. We have demonstrated continuous-wave room temperature lasing of GaAs lasers on silicon.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Lasers and Masers
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE