Accession Number:

ADA465733

Title:

High-Filling-Fraction Inverted ZnS Opals Fabricated by Atomic Layer Deposition

Descriptive Note:

Journal article

Corporate Author:

GEORGIA INST OF TECH ATLANTA SCHOOL OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

2003-09-29

Pagination or Media Count:

4.0

Abstract:

The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnSMn show that filling fractions 95 can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photonic crystal structures and optical microcavities.

Subject Categories:

  • Physical Chemistry
  • Optics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE