High-Filling-Fraction Inverted ZnS Opals Fabricated by Atomic Layer Deposition
GEORGIA INST OF TECH ATLANTA SCHOOL OF MATERIALS SCIENCE AND ENGINEERING
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The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnSMn show that filling fractions 95 can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photonic crystal structures and optical microcavities.
- Physical Chemistry