Magnetic and Optical Properties of Ga(1-x)Mn(x)N Grown by Metalorganic Chemical Vapour Deposition
GEORGIA INST OF TECH ATLANTA SCHOOL OF MATERIALS SCIENCE AND ENGINEERING
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Epitaxial layers of Ga1-xMnxN with concentrations of up to x 0.015 have been grown on c-sapphire substrates by metalorganic chemical vapor deposition. No ferromagnetic second phases were detected via high-resolution x-ray diffraction. Crystalline quality and surface structure were measured by x-ray diffraction and atomic force microscopy, respectively. No significant deterioration in crystal quality and no increase in surface roughness with the incorporation of Mn were detected. Optical measurements show a broad emission band attributed to a Mn-related transition at 3.0 eV that is not seen in the underlying GaN virtual substrate layers. Room temperature ferromagnetic hysteresis has been observed in these samples, which may be due to either Mn-clustering on the atomic scale or the Ga1-xMnxN bulk alloy.
- Industrial Chemistry and Chemical Processing
- Electricity and Magnetism