Fabrication Process for Electroabsorption Modulators
Interim rept. Feb 2005-Dec 2006
AIR FORCE RESEARCH LAB ROME NY SENSORS DIRECTORATE
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This report focuses on the fabrication aspects of Electroabsorption Modulator EAM devices developed by the University of California at San Diego UCSD. Air Force Research Laboratory AFRL SNDP personnel learned the processes directly at UCSD with the primary goal of transitioning the process to AFRLSNDP. EAMs were designed to operate at 1550 nm using Indium Phosphide InP technology with semi-insulating wafers purchased from Tee Wel Taiwan. Most of the process uses negative photoresist and is an 8-step mask procedure. The final metal coating is most critical to making robust n- and p- contacts. Without good metallization, wire bonding into a package fails. This report acts as a recipe aid to EAM device fabrication. Various times, levels, temperature, etc., quoted in this report were determined after careful calibration studies for each processing step and should only be used as guide values. Parameters change as materials age and machines change.
- Electrooptical and Optoelectronic Devices