Towards Resonant-State THz Laser Based on Strained p-Ge and SiGe QW Structures
Final project technical rept., 1 Jul 2002-30 Jun 2006
EUROPEAN OFFICE OF AEROSPACE RESEARCH AND DEVELOPMENT FPO NEW YORK 09421
Pagination or Media Count:
The main focus of the project is to investigate the possibilities for population inversion between two-dimensional 2D acceptor states and THz lasing in strained selectively doped SiGe quantum well QW structures, as well as the microscopic mechanism of a population inversion in resonant-state p-Ge laser RSL and conditions for continuous-wave cw operation of RSL and its parameters the radiation spectrum, the range of frequency tuning, the output power, and the interval of working temperature in this regime. For this purpose it is proposed 1. to study the formation of resonant acceptor states to determine energy spectrum of 2D shallow acceptor states in QWs as a function of electric field, QW width, doping level, alloy composition, and impurity center position, and 3D resonant acceptor states in p-Ge under stress as a function of strain 2. to study radiative transitions between resonant and localized shallow acceptor states split by size quantization and strain in 2D and by stress in 3D to investigate the possibilities for population inversion between split-off and ground states 3. to study effect of electric field heating of holes on transport phenomena and THz luminescence 4. to calculate carrier life times of resonant states, the probability of coherent capture and re-emission processes by resonant states as well as elastic resonant scattering in doped strained 2D structures and in strained bulk p-Ge to calculate the probabilities of optical transitions between 2D resonant and local states of impurities 5. to calculate hot-carrier distribution function taking into account resonant-state scattering and to develop theoretical models of population inversion.
- Lasers and Masers
- Quantum Theory and Relativity