Accession Number:

ADA465042

Title:

Strain-Modulated Epitaxy: A Flexible Approach to 3-D Band Structure Engineering Without Surface Patterning

Descriptive Note:

JOurnal article

Corporate Author:

GEORGIA INST OF TECH ATLANTA SCHOOL OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

• Carter-Coman, Carrier
• Brown, April S.
• Bicknell-Tassius, Robert
• Jokerst, Nan M.
• Allen, Mark

Report Date:

1996-07-08

Pagination or Media Count:

4.0

Abstract:

Thin compliant growth substrates have been used to reduce the strain in lattice-mismatched overlayers during epitaxial growth. This letter reports a new thin compliant substrate technology which allows these thin substrates to be patterned on the bottom, bonded surface. This lateral strain variation inverted stressor in the growing film can be combined with the additional effects of strain-dependent growth kinetics to realize the lateral control of composition and thickness without any surface topography on the substrate. Initial demonstrations of the growth of InGaAs on GaAs bottom-patterned thin substrates are presented herein.

Descriptors:

• *HETEROJUNCTIONS
• *ELASTIC PROPERTIES
• *EPITAXIAL GROWTH
• *BONDED JOINTS
• THICKNESS
• PHOTONS
• QUANTUM WIRES
• THINNESS
• TOPOGRAPHY
• ELECTRONIC EQUIPMENT
• DEMONSTRATIONS
• GROWTH(GENERAL)

Subject Categories:

• Couplers, Fasteners and Joints
• Crystallography
• Mechanics
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE