Dielectric and Infrared Properties of TiO2 Films Containing Anatase and Rutile
NEW MEXICO UNIV ALBUQUERQUE CENTER FOR HIGH TECHNOLOGY MATERIALS
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Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of Ti02 have been studied the source gases were TiCl4 and O2. The amorphous, as-deposited films had a dielectric constant 33 consistent with their measured density of 3.2 0.2 g cm - . Films deposited using a -41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 C resulted in a significant increase in the rutile content of the film.
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