Accession Number:

ADA464913

Title:

Dielectric and Infrared Properties of TiO2 Films Containing Anatase and Rutile

Descriptive Note:

Journal article

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE CENTER FOR HIGH TECHNOLOGY MATERIALS

Personal Author(s):

Report Date:

2005-07-18

Pagination or Media Count:

7.0

Abstract:

Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of Ti02 have been studied the source gases were TiCl4 and O2. The amorphous, as-deposited films had a dielectric constant 33 consistent with their measured density of 3.2 0.2 g cm - . Films deposited using a -41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 C resulted in a significant increase in the rutile content of the film.

Subject Categories:

  • Electrical and Electronic Equipment
  • Miscellaneous Materials
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE