200 deg C Operation of a DC-DC Converter with SiC Power Devices
Conference paper (preprint)
UES INC DAYTON OH
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Design, operation, and performance evaluation of a 180 W, 100 kHz, 270 V28 V two-transistor forward dc-dc power converter are reported for elevated temperatures up to 200 deg C. Use of SiC power semiconductor devices, and high temperature powdered ferrite for magnetics design, and characterization of ceramic X7R capacitors leakage current over temperature are presented as well.
- Electrical and Electronic Equipment