Accession Number:

ADA464713

Title:

The Impact of Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation

Descriptive Note:

Conference paper

Corporate Author:

GLASGOW UNIV (UNITED KINGDOM) DEPT OF ELECTRONICS AND ELECTRICAL ENGINEERING

Report Date:

2006-01-01

Pagination or Media Count:

5.0

Abstract:

A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel.

Subject Categories:

  • Solid State Physics
  • Electrical and Electronic Equipment
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE