Monte Carlo Simulation of Implant Free InGaAs MOSFET
GLASGOW UNIV (UNITED KINGDOM) DEPT OF ELECTRONICS AND ELECTRICAL ENGINEERING
Pagination or Media Count:
The performance potential of n-type implant free In0.25Ga0.75As MOSFETs with high-kappa dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 Am and transconductance up to 1342 mSmm. This implant free transistor is then scaled in both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 Am and 3259 Am and transconductance of 2076 mSmm and 3192 mSmm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept.
- Electrical and Electronic Equipment
- Statistics and Probability