GaAs/AIGaAs Multiquantum Well Resonant Photorefractive Devices Fabricated Using Epitaxial Lift-Off
NAVAL RESEARCH LAB WASHINGTON DC
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This letter deals with resonant photorefractive devices fabricated from multi-quantum wells of GaAsAl0.3Ga.07As and operated in a quantum-confined Stark effect geometry. Details of the processing are presented. Epitaxial lift-off was used to remove the active device from the substrate. Low-temperature Al0.3Ga.07 was used as an insulator to form metal-insulator-semiconductor structures on both sides of the multi-quantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing with a diffraction efficiency of approx. 0.03 was demonstrated. The incorporation of a nitride layer between the top electrode and the low-temperature AlGaAs increased the efficiency to 0.5. The improvement is attributed to a reduction in the conduction of carriers across the low-temperature layer into the electrode.
- Industrial Chemistry and Chemical Processing
- Electrooptical and Optoelectronic Devices