Optimization of Buffer Layers for InGaAs/AIGaAs PIN Optical Modulators Grown on GaAs Substrates by Molecular Beam Epitaxy
NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
Pagination or Media Count:
In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAsAlGaAs PIN multiple quantum well MQW modulators. We examine GaAs buffer layers and linearly graded InGaAs buffer layers. Our results indicate that for lower indium concentrations in the quantum wells less than about 23 better device performance and surface morphology are obtained by growing directly on GaAs. PIN MQWs with indium mole fractions higher than about 24 have better properties when a linearly graded buffer layer is used.
- Industrial Chemistry and Chemical Processing
- Inorganic Chemistry
- Test Facilities, Equipment and Methods