Negative Differential Resistance of InGaAs Dual Channel Transistors
NATIONAL INST OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY TSUKUBA IBARAKI (JAPAN)
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We demonstrate a new type of velocity modulation transistor VMT with an InGaAs dual channel structure fabricated on an InP 001 substrate. The dual channel structure consists of a high mobility 10 nm In0.53Ga0.47As quantum well, a 2 nm In0.52Al0.48As barrier layer, and a low mobility 1 nm In0.26Ga0.74As quantum well. The VMTs have a negative differential resistance NDR effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to high-frequency, high-speed, and low-power consumption devices.
- Electrical and Electronic Equipment
- Laminates and Composite Materials
- Quantum Theory and Relativity