Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy
OSAKA UNIV (JAPAN) GRADUATE SCHOOL OF ENGINEERING
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A self-organized In0.53Ga0.47AsIn0.53Ga0.47As2In0.44Al0.56As2 quantum wire QWR laser was grown on a 775B InP substrate by molecular beam epitaxy MBE. Well lattice-matched and flat cladding layers were grown at a rather high temperature 595 degrees C. Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAsInGaAs2InAlAs2 with an amplitude of 2 nm and a period of 40 nm. A 50 micrometers x 500 micrometers stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density Jth of 1.2 kAsq cm and a lasing wavelength of 1370 nm at 250 K under pulsed current condition.
- Lasers and Masers
- Quantum Theory and Relativity