Accession Number:

ADA464545

Title:

Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy

Descriptive Note:

Conference paper

Corporate Author:

OSAKA UNIV (JAPAN) GRADUATE SCHOOL OF ENGINEERING

Report Date:

2006-01-01

Pagination or Media Count:

6.0

Abstract:

A self-organized In0.53Ga0.47AsIn0.53Ga0.47As2In0.44Al0.56As2 quantum wire QWR laser was grown on a 775B InP substrate by molecular beam epitaxy MBE. Well lattice-matched and flat cladding layers were grown at a rather high temperature 595 degrees C. Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAsInGaAs2InAlAs2 with an amplitude of 2 nm and a period of 40 nm. A 50 micrometers x 500 micrometers stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density Jth of 1.2 kAsq cm and a lasing wavelength of 1370 nm at 250 K under pulsed current condition.

Subject Categories:

  • Lasers and Masers
  • Quantum Theory and Relativity
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE