Transport Properties of Beam-Deposited Pt Nanowires
OSAKA UNIV (JAPAN)
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Pt wires were fabricated by using electron-beam EB and Ga focused-ion-beam FIB irradiation while providing C5H5PtCH33 gas through a nozzle. Electron transport properties of the wires were investigated. The resistance of the EB-deposited wires was quite high as deposited but was reduced by 3 4 orders of magnitude after 400 -500 degrees C annealing. The electron transport of the as-deposited EB-deposited wire was dominated by the variable range hopping and the Coulomb blockade simultaneously, and showed the antilocalization effect after 400 degrees C annealing. The electron phase-breaking length in the EB-deposited wire with 400 degrees C annealing, which was derived from a theoretical fitting, is 10 nm at 4 K and increases with decreasing temperature. This means that 10 nm fabrication technology and improvement of coherence length are required for coherent vacuum nanoelectronics.
- Electrical and Electronic Equipment