Electron Transport in Si Nanowires
ARIZONA STATE UNIV TEMPE
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We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surfaceinterface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.
- Electrical and Electronic Equipment
- Solid State Physics