Accession Number:

ADA464532

Title:

Electron Transport in InAs/AlGaSb Ballistic Rectifiers

Descriptive Note:

Conference paper

Corporate Author:

OSAKA INST OF TECHNOLOGY (JAPAN)

Report Date:

2006-01-01

Pagination or Media Count:

5.0

Abstract:

Nonlinear transport properties of a ballistic rectifier fabricated from InAsAlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength.

Subject Categories:

  • Electrical and Electronic Equipment
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE