Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
HOKKAIDO UNIV SAPPORO (JAPAN) RESEARCH CENTER FOR INTERFACE QUANTUM ELECTRONICS
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A new single electron SE binary-decision diagram BDD node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAsGaAs nanowires and nanometer-sized Schottky wrap gates WPGs, and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed.
- Quantum Theory and Relativity
- Solid State Physics
- Electrical and Electronic Equipment