Accession Number:

ADA464508

Title:

InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2000-06-01

Pagination or Media Count:

6.0

Abstract:

We report on the use of InAlAs linearly graded buffer layers for improving the performance of Insub yGasub 1-yAsy0.420.42AlGaAs intersubband transition ISBT superlattice structures grown on GaAs substrates by molecular beam epitaxy. Linearly graded InAlAs buffer layers give better optical confinement in the active superlattice region, similar intersubband transition linewidths, and comparable surface morphology compared to linearly graded InGaAs buffer layers. The best surface morphology for our ISBT superlattices was obtained by growing the linearly graded InGaAs buffer layer at 360 degrees C.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE