Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectrode Devices
Final rept. 8 Aug 2006-8 Feb 2007
INLUSTRA TECHNOLOGIES LLC SANTA BARBARA CA
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This report was developed under STTR contract for topic A06-T019. Inlustra Technologies and the University of California, Santa Barbara conducted a Phase I STTR research program to grow and characterize thick non-polar and semi-polar gallium nitride GaN wafers that will act as seeds for subsequent GaN boule growth in Phase II. Inlustra developed non-polar a-plane and m-plane GaN films with smooth surfaces and minimal wafer bowing and cracking. The growth conditions for each crystallographic plane were primarily optimized with respect to surface morphology. Defect reduction methods were then applied to achieve low average extended defect density across the seed wafers. UCSB researchers conducted detailed microstructural characterization on these non-polar and semi-polar GaN thick films to evaluate their utility as seeds for equiaxed GaN boule growth in Phase II.
- Electrical and Electronic Equipment
- Electrooptical and Optoelectronic Devices