Accession Number:

ADA464072

Title:

First Demonstration of ~10 Microns FPAs in InAs/GaSb SLS

Descriptive Note:

Journal article (postprint)

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL CENTER FOR QUANTUM DEVICES

Report Date:

2006-10-01

Pagination or Media Count:

5.0

Abstract:

The concept of Type II InAsGaSb superlattice was first brought by Nobel Laureate L. Esaki, et al. in the 1970s. There had been few studies on this material system until two decades later when reasonable quality material growth was made possible using molecular beam epitaxy. With the addition of cracker cells for the group V sources and optimizations of material growth conditions, the superlattice quality become significantly improved and the detectors made of these superlattice materials can meet the demand in some practical field applications. Especially in the LWIR regime, it provides a very promising alternative to HgCdTe for better material stability and uniformity, etc. We have developed the empirical tight binding model ETBM for precise determination of the superlattice bandgap.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE